Invention Grant
- Patent Title: Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)
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Application No.: US14214064Application Date: 2014-03-14
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Publication No.: US09728240B2Publication Date: 2017-08-08
- Inventor: Ebrahim Abedifard , Parviz Keshtbod
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Freemont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Freemont
- Agent Maryam Imam; Bing K. Yen
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16
Abstract:
A method of programming a voltage-controlled magnetoresistive tunnel junction (MTJ) includes applying a programming voltage pulse (Vp), reading the voltage-controlled MTJ, and determining if the voltage-controlled MTJ is programmed to a desired state and if not, changing the Vp and repeating the applying and reading steps until the voltage-controlled MTJ is programmed to the desired state.
Public/Granted literature
- US20150131369A9 PULSE PROGRAMMING TECHNIQUES FOR VOLTAGE-CONTROLLED MAGNETORESISTIVE TUNNEL JUNCTION (MTJ) Public/Granted day:2015-05-14
Information query
