Invention Grant
- Patent Title: Semiconductor device suppressing BTI deterioration
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Application No.: US15236281Application Date: 2016-08-12
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Publication No.: US09728246B2Publication Date: 2017-08-08
- Inventor: Keisuke Fujishiro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4076 ; G11C11/4093 ; G11C11/4094 ; G11C11/4091 ; G11C11/4096 ; G11C11/406

Abstract:
Disclosed herein is a device includes a command generation circuit that activates first and second command signals, an internal circuit that includes a plurality of transistors that are brought into a first operation state when at least one of the first and second command signals is activated, and an output gate circuit that receives a first signal output from the internal circuit, the output gate circuit being configured to pass the first signal when the second command signal is deactivated and to block the first signal when the second command signal is activated.
Public/Granted literature
- US20160351246A1 SEMICONDUCTOR DEVICE SUPPRESSING BTI DETERIORATION Public/Granted day:2016-12-01
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