A memory write tracking device is applied to a data write operation to at least a memory cell row. The memory write tracking device includes a dummy cell row, a variation sensor, a judging device and a word-line pulse generator. The dummy cell row includes a plurality of dummy memory cells for simulating the data write operation to the memory cell row. The variation sensor senses a set of circuit parameters for write ability of the memory cell row. The judging device determines a threshold number according to a change of the set of circuit parameters and sends an enabling signal when a threshold number of the dummy memory cells have been successfully written with the data. The word-line pulse generator determines a write cycle of the data write operation in response to the enabling signal. An associated memory write tracking method is also provided.