Invention Grant
- Patent Title: Light-erasable embedded memory device and method of manufacturing the same
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Application No.: US15140506Application Date: 2016-04-28
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Publication No.: US09728260B1Publication Date: 2017-08-08
- Inventor: Hao Su , Chow Yee Lim , Chao Jiang , Hong Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/336
- IPC: H01L21/336 ; G11C16/04 ; H01L27/11521 ; H01L29/51 ; H01L21/28 ; H01L21/268 ; H01L23/528 ; H01L23/522
Abstract:
A light-erasable embedded memory device and a method for manufacturing the same are provided in the present invention. The light-erasable embedded memory device includes a substrate with a memory region and a core circuit region, a floating gate on the memory region of the substrate, at least one light-absorbing film above the floating gate, wherein at least one light-absorbing film is provided with dummy via holes overlapping the floating gate, and a dielectric layer on the light-absorbing film and filling up the dummy via holes.
Information query
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