- Patent Title: Non-volatile memory systems with multi-write direction memory units
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Application No.: US14928509Application Date: 2015-10-30
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Publication No.: US09728262B2Publication Date: 2017-08-08
- Inventor: Ivan Baran , Aaron Lee , Mrinal Kochar , Mikhail Palityka , Dennis Ea , Yew Yin Ng , Abhijeet Bhalerao
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/14 ; G11C16/34

Abstract:
Non-volatile memory systems with multi-write direction memory units are disclosed. In one implementation an apparatus comprises a non-volatile memory and a controller in communication with the non-volatile memory. The controller is configured to select an empty memory block of the non-volatile memory for the storage of data; examine an identifier associated with the memory block to determine a write direction for the storage of data; and write data to the memory block beginning with an initial word line of the memory block or a last word line of the memory block dependent on the write direction. The controller is further configured to erase the memory unit and, in response to erasing the memory unit, modify the identifier to change the write direction for a subsequent write of data to the memory block.
Public/Granted literature
- US20170125104A1 Non-Volatile Memory Systems with Multi-Write Direction Memory Units Public/Granted day:2017-05-04
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