Invention Grant
- Patent Title: Charge injection noise reduction in sample-and-hold circuit
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Application No.: US14928524Application Date: 2015-10-30
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Publication No.: US09728271B2Publication Date: 2017-08-08
- Inventor: Noam Eshel , Golan Zeituni , Zvika Lupu
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Michael Best & Friedrich LLP
- Main IPC: G11C27/02
- IPC: G11C27/02

Abstract:
A sample-and-hold circuit includes a first transistor; a second transistor disposed between a gate electrode and a drain electrode of the first transistor; a sampling capacitor, an electrode of the sampling capacitor being connected to the gate electrode of the first transistor; and a first current source connected to the drain electrode of the first transistor, where a gate electrode of the second transistor receives a gate control signal. A minimum voltage of the gate control signal is Vth2+Vsat2+Vth1+Vsat1, where Vth1 is a threshold voltage of the first transistor, Vsat1 is a saturation voltage of the first transistor, Vth2 is a threshold voltage of the second transistor, and Vsat2 is a saturation voltage of the second transistor.
Public/Granted literature
- US20170125124A1 CHARGE INJECTION NOISE REDUCTION IN SAMPLE-AND-HOLD CIRCUIT Public/Granted day:2017-05-04
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