Invention Grant
- Patent Title: Memory system including a memory device, and methods of operating the memory system and the memory device
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Application No.: US14456572Application Date: 2014-08-11
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Publication No.: US09728279B2Publication Date: 2017-08-08
- Inventor: Hye-Jin Yim , Sang-Yong Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0096894 20130814
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/52 ; G11C16/34 ; G11C29/42
Abstract:
A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.
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