Invention Grant
- Patent Title: Ion beam scanner for an ion implanter
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Application No.: US14722253Application Date: 2015-05-27
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Publication No.: US09728371B2Publication Date: 2017-08-08
- Inventor: Hilton Frank Glavish , Masao Naito , Benjamin Thomas King
- Applicant: Nissin Ion Equipment Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Haynes and Boone LLP
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/147 ; H01J37/317 ; H01J37/14

Abstract:
A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.
Public/Granted literature
- US20160351372A1 Ion Beam Scanner for an Ion Implanter Public/Granted day:2016-12-01
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