A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.