Invention Grant
- Patent Title: Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure
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Application No.: US15150444Application Date: 2016-05-10
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Publication No.: US09728397B1Publication Date: 2017-08-08
- Inventor: Hsu Ting , Chun-Wei Yu , Chueh-Yang Liu , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L27/088 ; H01L21/8234 ; H01L29/06 ; H01L21/311
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes fin shaped structures and a recessed insulating layer. The fin shaped structures are disposed on a substrate. The recessed insulating layer covers a bottom portion of each of the fin shaped structures to expose a top portion of each of the fin shaped structures. The recessed insulating layer has a curve surface and a wicking structure is defined between a peak and a bottom of the curve surface. The wicking structure is disposed between the fin shaped structures and has a height being about 1/12 to 1/10 of a height of the top portion of the fin shaped structures.
Information query
IPC分类:
