Invention Grant
- Patent Title: Nanowire semiconductor device partially surrounded by a gate
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Application No.: US14581029Application Date: 2014-12-23
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Publication No.: US09728405B2Publication Date: 2017-08-08
- Inventor: Sylvain Barraud , Pierrette Rivallin , Pascal Scheiblin
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1450079 20140107
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L29/06 ; H01L21/306 ; B82Y10/00 ; B82Y40/00 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786
Abstract:
A semiconductor device is provided, including two semiconductor nanowires superimposed one on top of the other or arranged next to one another, spaced one from the other and forming channel regions of the semiconductor device, a dielectric structure entirely filling a space between the nanowires and which is in contact with the nanowires, a gate dielectric and a gate covering a first of the nanowires, sidewalls of the nanowires and sidewalls of the dielectric structure when the nanowires are superimposed one on top of the other, or covering a part of the upper faces of the nanowires and a part of an upper face of the dielectric structure when the nanowires are arranged next to one another, and wherein the dielectric structure comprises a portion of dielectric material with a relative permittivity greater than or equal to 20.
Public/Granted literature
- US20150194489A1 NANOWIRE SEMICONDUCTOR DEVICE PARTIALLY SURROUNDED BY A GRATING Public/Granted day:2015-07-09
Information query
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