Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15275576Application Date: 2016-09-26
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Publication No.: US09728409B2Publication Date: 2017-08-08
- Inventor: Kazuhiro Harada , Kimihiko Nakatani , Hiroshi Ashihara
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/4763 ; H01L21/28 ; C23C16/34 ; C23C16/455 ; C01B21/076 ; H01L21/67 ; H01L21/673 ; H01L21/285 ; H01L29/51
Abstract:
Provided is a method of manufacturing a semiconductor device, including: forming a stacked metal nitride film including a first metal nitride film and a second metal nitride film on a substrate by alternately performing steps (a) and (b) a plurality of times, wherein the step (a) includes alternately supplying: a first metal source containing a first halogen element and a metal element; and a nitrogen-containing source to the substrate a plurality of times to form the first metal nitride film, and the step (b) includes alternately supplying: a second metal source containing a second halogen element different from the first halogen element and the metal element; and the nitrogen-containing source to the substrate a plurality of times to form the second metal nitride film.
Public/Granted literature
- US20170011926A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-01-12
Information query
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