Invention Grant
- Patent Title: Method of depositing copper using physical vapor deposition
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Application No.: US14313751Application Date: 2014-06-24
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Publication No.: US09728414B2Publication Date: 2017-08-08
- Inventor: Wen Yu , Stephen B. Robie , Jeremias D. Romero
- Applicant: SPANSION LLC
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/285 ; H01L23/532 ; H01L21/768
Abstract:
The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
Public/Granted literature
- US20140377948A1 METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION Public/Granted day:2014-12-25
Information query
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