Invention Grant
- Patent Title: Method for manufacturing semiconductor structure
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Application No.: US15077237Application Date: 2016-03-22
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Publication No.: US09728427B2Publication Date: 2017-08-08
- Inventor: Chen-Hua Yu , Chih-Fan Huang , Chun-Hung Lin , Ming-Da Cheng , Chung-Shi Liu , Mirng-Ji Lii
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L29/78 ; H01L25/00 ; H01L23/00 ; H01L21/66 ; H01L21/268 ; H01L23/31

Abstract:
A method includes followings operations. A substrate including a first surface and a second surface is provided. The substrate and a transparent film are heated to attach the transparent film on the first surface. A first coefficient of a thermal expansion (CTE) mismatch is between the substrate and the transparent film. The substrate and the transparent film are cooled. A polymeric material is disposed on the second surface. A second CTE mismatch is between the substrate and the polymeric material. The second CTE mismatch is counteracted by the first CTE mismatch.
Public/Granted literature
- US20160204042A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2016-07-14
Information query
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