- 专利标题： Method of fabricating semiconductor device
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申请号： US14938941申请日： 2015-11-12
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公开(公告)号： US09728446B2公开(公告)日： 2017-08-08
- 发明人: Ingoo Kang , Dong-Min Kang , Sangkyun Kim , Yun-Jeong Kim , Jungsik Choi , Young Taek Hong
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2013-0156524 20131216
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; C11D11/00 ; C11D7/06 ; C11D7/50 ; H01L21/3105 ; H01L21/02 ; H01L21/033 ; H01L21/311 ; H01L21/3213 ; C11D7/32 ; B08B1/00 ; B08B3/12 ; B08B7/04 ; H01L27/11582
摘要：
Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.
公开/授权文献
- US20160071762A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2016-03-10
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