Invention Grant
- Patent Title: Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures
-
Application No.: US14416895Application Date: 2013-07-08
-
Publication No.: US09728458B2Publication Date: 2017-08-08
- Inventor: Mariam Sadaka , Bernard Aspar , Chrystelle Lagahe Blanchard
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- International Application: PCT/IB2013/001490 WO 20130708
- International Announcement: WO2014/020390 WO 20140206
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L21/268 ; H01L21/304 ; H01L21/683 ; H01L33/00

Abstract:
Methods of fabricating a semiconductor structure include bonding a carrier wafer over a substrate, removing at least a portion of the substrate, transmitting laser radiation through the carrier wafer and weakening a bond between the substrate and the carrier wafer, and separating the carrier wafer from the substrate. Other methods include forming circuits over a substrate, forming trenches in the substrate to define unsingulated semiconductor dies, bonding a carrier substrate over the unsingulated semiconductor dies, transmitting laser radiation through the carrier substrate and weakening a bond between the unsingulated semiconductor dies and the carrier substrate, and separating the carrier substrate from the unsingulated semiconductor dies. Some methods include thinning at least a portion of the substrate, leaving the plurality of unsingulated semiconductor dies bonded to the carrier substrate.
Public/Granted literature
Information query
IPC分类: