Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14981174Application Date: 2015-12-28
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Publication No.: US09728468B2Publication Date: 2017-08-08
- Inventor: Akira Katakami
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2013-125374 20130614
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092

Abstract:
A first well in a first conductivity type which is formed at a first region and is electrically connected to a first power supply line, a second well in a second conductivity type being an opposite conductivity type of the first conductivity type which is formed at a second region and is electrically connected to a second power supply line, a third well in the second conductivity type which is integrally formed with the second well at a third region adjacent to the second region, a fourth well in the first conductivity type integrally formed with the first well at a fourth region adjacent to the first region, a fifth well in the first conductivity type which is formed at the third region to be shallower than the third well, and a sixth well in the second conductivity type which is formed at the fourth region to be shallower than the fourth well, are included.
Public/Granted literature
- US20160133527A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-05-12
Information query
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