- Patent Title: Method of manufacturing a semiconductor device having scribe lines
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Application No.: US15140234Application Date: 2016-04-27
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Publication No.: US09728477B2Publication Date: 2017-08-08
- Inventor: Nien-Fang Wu , Chao-Wen Shih , Yung-Ping Chiang , Hao-Yi Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/31 ; H01L23/10 ; H01L23/04 ; H01L23/13 ; H01L23/06 ; H01L21/56 ; H01L23/00 ; H01L23/58 ; H01L21/78 ; H01L23/29

Abstract:
The method of manufacturing a semiconductor device includes receiving a substrate. The substrate comprises at least one chip region and at least one scribe line next to the chip region, and each chip region comprises an active region. The method further includes disposing a buffer layer at least covering the scribe line, disposing a dielectric layer including an opening over each chip region, and disposing a bump material to the opening of the dielectric layer and electrically connecting to the active region. The method further includes forming a mold over the substrate, covering the buffer layer and cutting the substrate along the scribe line. Furthermore, the buffer layer includes an elastic modulus less than that of the mold, or the buffer layer includes a coefficient of thermal expansion less than that of the mold.
Public/Granted literature
- US20160240453A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-08-18
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