Invention Grant
- Patent Title: Passivation layer and method of making a passivation layer
-
Application No.: US14699704Application Date: 2015-04-29
-
Publication No.: US09728480B2Publication Date: 2017-08-08
- Inventor: Kurt Matoy , Hubert Maier , Christian Krenn , Elfriede Kraxner Wellenzohn , Helmut Schoenherr , Juergen Steinbrenner , Markus Kahn , Silvana Fister , Christoph Brunner , Herbert Gietler , Uwe Hoeckele
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L23/31 ; H01L21/02 ; H01L23/29
Abstract:
A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
Public/Granted literature
- US20150235917A1 Passivation Layer and Method of Making a Passivation Layer Public/Granted day:2015-08-20
Information query
IPC分类:
