A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive feature in the dielectric layer, and the conductive feature includes a catalyst layer and a conductive element. The catalyst layer is between the conductive element and the dielectric layer, and the catalyst layer is in physical contact with the conductive element. The catalyst layer continuously surrounds a sidewall and a bottom of the conductive element. The catalyst layer is made of a material different from that of the conductive element, and the catalyst layer is capable of lowering a formation temperature of the conductive element.