Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
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Application No.: US15151079Application Date: 2016-05-10
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Publication No.: US09728490B2Publication Date: 2017-08-08
- Inventor: Ju-Il Choi , Hyo-Ju Kim , Yeun-Sang Park , Atsushi Fujisaki , Kwang-Jin Moon , Byung-Lyul Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2015-0119066 20150824
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/48 ; H01L23/31 ; H01L23/532 ; H01L23/29 ; H01L23/528 ; H01L23/522 ; H01L23/00 ; H01L21/768 ; H01L23/498 ; H01L21/48

Abstract:
A semiconductor device includes a via structure penetrating through a substrate, a portion of the via structure being exposed over a surface of the substrate, a protection layer pattern structure provided on the surface of the substrate and including a first protection layer pattern and a second protection layer pattern, the first protection layer pattern surrounding a lower sidewall of the exposed portion of the via structure and exposing an upper sidewall of the exposed portion of the via structure, the second protection layer pattern exposing a portion of the top surface of the first protection layer pattern adjacent to the sidewall of the via structure, and a pad structure provided on the via structure and the protection layer pattern structure and covering the top surface of the first protection layer pattern exposed by the second protection layer pattern.
Public/Granted literature
- US20170062308A1 Semiconductor Devices and Methods of Manufacturing the Same Public/Granted day:2017-03-02
Information query
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