A semiconductor device includes a fuse pattern disposed over a semiconductor substrate, an epoxy mold compound (EMC) layer disposed over the fuse pattern, a first package substrate disposed over the EMC layer, an insulating film disposed over the first package substrate, and a second package substrate disposed over the insulating film. To the first package substrate, a Vss voltage or a negative voltage lower than the Vss voltage is applied to prevent impurities from migrating to the fuse pattern.