Invention Grant
- Patent Title: Bonding method of semiconductor chip and bonding apparatus of semiconductor chip
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Application No.: US14710070Application Date: 2015-05-12
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Publication No.: US09728519B2Publication Date: 2017-08-08
- Inventor: Yoichiro Kurita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2014-221907 20141030
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/67 ; H01L21/02

Abstract:
According to one embodiment, there is provided a bonding method of a semiconductor chip. The bonding method includes arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet. The bonding method includes pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate. The bonding method includes stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.
Public/Granted literature
- US20160126218A1 BONDING METHOD OF SEMICONDUCTOR CHIP AND BONDING APPARATUS OF SEMICONDUCTOR CHIP Public/Granted day:2016-05-05
Information query
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