Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US15288337Application Date: 2016-10-07
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Publication No.: US09728523B2Publication Date: 2017-08-08
- Inventor: Tomoichiro Toyama
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2010-248494 20101105; JP2010-292644 20101228; JP2011-215534 20110929
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L25/075 ; H01L33/48 ; H01L33/60 ; H01L33/62 ; H01L33/64 ; H01L33/08 ; H01L33/56 ; H01L27/15 ; H01L33/50 ; H01L33/52 ; H01L25/16

Abstract:
A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.
Public/Granted literature
- US20170025396A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2017-01-26
Information query
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