Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US15196972Application Date: 2016-06-29
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Publication No.: US09728536B2Publication Date: 2017-08-08
- Inventor: Qun Shao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410206055 20140515
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/092 ; H01L29/66 ; H01L29/49 ; H01L21/8238 ; H01L21/02 ; H01L21/3105 ; H01L21/32 ; H01L21/3213 ; H01L21/321 ; H01L21/311 ; H01L21/033 ; H01L21/28 ; H01L21/8234
Abstract:
A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region; and forming at least one first dummy gate in the first region and at least one second dummy gate in the second region. Further, the method includes forming a dielectric layer with a top surface leveling with a surface of the first dummy gate on the semiconductor substrate; oxidizing a top portion of the second dummy gate to form a protective layer to prevent over-polishing on the second region; removing the first dummy gate to form a first gate trench; forming a first metal layer to fill the first gate trench and cover the protective layer and the dielectric layer; and removing a portion of the first metal layer higher than the dielectric layer to form a first metal gate in the first gate trench.
Public/Granted literature
- US20160307897A1 SEMICONDUCTOR DEVICES Public/Granted day:2016-10-20
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