Invention Grant
- Patent Title: Semiconductor device for reducing coupling capacitance
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Application No.: US15208348Application Date: 2016-07-12
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Publication No.: US09728540B2Publication Date: 2017-08-08
- Inventor: Ky Hyun Han , Chang Heon Park , Dong Gu Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0017325 20140214
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/768 ; H01L27/11 ; H01L21/02 ; H01L21/311 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.
Public/Granted literature
- US20160322364A1 SEMICONDUCTOR DEVICE FOR REDUCING COUPLING CAPACITANCE Public/Granted day:2016-11-03
Information query
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