Invention Grant
- Patent Title: Backside illuminated image sensor and method of manufacturing the same
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Application No.: US14600684Application Date: 2015-01-20
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Publication No.: US09728573B2Publication Date: 2017-08-08
- Inventor: Tsung-Han Tsai , Yun-Wei Cheng , Chun-Hao Chou , Kuo-Cheng Lee , Yung-Lung Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L27/146

Abstract:
A back side illuminated (BSI) image sensor device, includes: a substrate including a front side and a back side opposite to the front side; a radiation-sensing region disposed in the substrate; and a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region. The DTI grid extends from the back side toward the front side, and includes a segmented strip in a top view from the back side.
Public/Granted literature
- US20160211290A1 BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-07-21
Information query
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