A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a bottom electrode layer over a substrate and forming a first passivation layer over the bottom electrode layer by a first atomic layer deposition process. The method for manufacturing a semiconductor structure further includes forming a dielectric layer over the first passivation layer by a second atomic layer deposition process and forming a second passivation layer over the dielectric layer by a third atomic layer deposition process. The method for manufacturing a semiconductor structure further includes forming a top electrode layer over the second passivation layer.