Invention Grant
- Patent Title: Variable channel strain of nanowire transistors to improve drive current
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Application No.: US14923532Application Date: 2015-10-27
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Publication No.: US09728602B2Publication Date: 2017-08-08
- Inventor: Tsung-Hsing Yu , Yeh Hsu , Chia-Wen Liu , Jean-Pierre Colinge
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L21/28 ; H01L29/66 ; H01L29/775 ; H01L29/49
Abstract:
A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level. The difference between the second strain level and the first strain level is less than the second strain level.
Public/Granted literature
- US20160049472A1 VARIABLE CHANNEL STRAIN OF NANOWIRE TRANSISTORS TO IMPROVE DRIVE CURRENT Public/Granted day:2016-02-18
Information query
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