- Patent Title: Bipolar junction transistors with double-tapered emitter fingers
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Application No.: US14745764Application Date: 2015-06-22
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Publication No.: US09728603B2Publication Date: 2017-08-08
- Inventor: Hanyi Ding , Vibhor Jain , Alvin J. Joseph , Anthony K. Stamper
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/08 ; H01L29/73 ; H01L29/66 ; H01L29/737 ; H01L29/06
Abstract:
Device structures for a bipolar junction transistor and methods of fabricating a device structure for a bipolar junction transistor. A base layer comprised of a first semiconductor material is formed. An emitter layer comprised of a second semiconductor material is formed on the base layer. The emitter layer is patterned to form an emitter finger having a length and a width that changes along the length of the emitter finger.
Public/Granted literature
- US20160372548A1 BIPOLAR JUNCTION TRANSISTORS WITH DOUBLE-TAPERED EMITTER FINGERS Public/Granted day:2016-12-22
Information query
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