- 专利标题： Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer
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申请号： US14389185申请日： 2012-11-01
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公开(公告)号： US09728609B2公开(公告)日： 2017-08-08
- 发明人: Tetsuo Narita , Kenji Ito , Kazuyoshi Tomita , Nobuyuki Otake , Shinichi Hoshi , Masaki Matsui
- 申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , DENSO CORPORATION
- 申请人地址： JP Nagakute JP Kariya
- 专利权人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,DENSO CORPORATION
- 当前专利权人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,DENSO CORPORATION
- 当前专利权人地址： JP Nagakute JP Kariya
- 代理机构： Oliff PLC
- 优先权： JP2012-074182 20120328
- 国际申请： PCT/JP2012/078390 WO 20121101
- 国际公布： WO2013/145404 WO 20131003
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/20 ; C30B29/40 ; H01L21/02 ; C30B25/08 ; C30B25/18 ; H01L29/04 ; H01L33/00
摘要：
A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
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