- Patent Title: Generation of multiple diameter nanowire field effect transistors
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Application No.: US13610266Application Date: 2012-09-11
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Publication No.: US09728619B2Publication Date: 2017-08-08
- Inventor: Sarunya Bangsaruntip , Guy M. Cohen , Jeffrey W. Sleight
- Applicant: Sarunya Bangsaruntip , Guy M. Cohen , Jeffrey W. Sleight
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/423
- IPC: H01L29/423 ; B82Y10/00 ; H01L29/06 ; H01L29/66 ; H01L29/786
Abstract:
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.
Public/Granted literature
- US20130001517A1 GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS Public/Granted day:2013-01-03
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