A FinFET includes a fin and a conductive gate surrounding a top channel region of the fin, the channel region of the fin being filled with an epitaxial semiconductor channel material extending below a bottom surface of the conductive gate. The top channel region of the fin includes epitaxial semiconductor channel material that is at least majority defect free, the at least a majority of defects associated with forming the epitaxial semiconductor material in the channel region being trapped below a top portion of the channel region. The FinFET may be achieved by a method, the method including providing a starting semiconductor structure, the starting semiconductor structure including a bulk semiconductor substrate, semiconductor fin(s) on the bulk semiconductor substrate and surrounded by a dielectric layer, and a dummy gate over a channel region of the semiconductor fin(s). The method further includes forming source and drain recesses adjacent the channel region, removing the dummy gate, recessing the semiconductor fin(s), the recessing leaving a fin opening above the recessed semiconductor fin(s), and growing epitaxial semiconductor channel material in the fin opening, such that at least a majority of defects associated with the growing are trapped at a bottom portion of the at least one fin opening.