A method of fabricating a vertical field effect transistor includes forming a base layer on a doped layer that is formed on a substrate, and forming fin hard masks above the base layer. Spacers are formed adjacent to each side of each of the fin hard masks above the base layer. A width dimension of each of the spacers is the same. Gaps between the spacers are filled with oxide prior to removing the spacers. The spacers are removed to leave gaps of the same width on each side of each of the fin hard masks. An etch in the gaps forms a plurality of fins below the fin hard masks. A height dimension of each of the plurality of fins is the same and a space between two of the plurality of fins is different than a second space between two others of the plurality of fins.