- 专利标题: Tunnel field effect transistors having low turn-on voltage
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申请号: US14642918申请日: 2015-03-10
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公开(公告)号: US09728639B2公开(公告)日: 2017-08-08
- 发明人: Nuo Xu , Jing Wang , Woosung Choi
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel, P.A.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/08 ; H01L29/66 ; H01L21/265 ; H01L29/06 ; H01L29/165 ; H01L29/739 ; H01L21/28 ; H01L29/49
摘要:
Tunnel field effect transistors include a semiconductor substrate; a source region in the semiconductor substrate; a drain region in the semiconductor substrate; a channel region in the semiconductor substrate between the source region and the drain region; and a gate electrode on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type that is different from the first conductivity type, and a second region having an intrinsic conductivity type that is between the first region and the third region.