- 专利标题： Semiconductor device and fabrication method thereof
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申请号： US15223597申请日： 2016-07-29
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公开(公告)号： US09728641B2公开(公告)日： 2017-08-08
- 发明人: Yen-Ru Lee , Ming-Hua Yu , Tze-Liang Lee , Chii-Horng Li , Pang-Yen Tsai , Lilly Su , Yi-Hung Lin , Yu-Hung Cheng
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L21/306 ; H01L29/04 ; H01L29/06 ; H01L29/08 ; H01L21/02 ; H01L21/3065 ; H01L21/308 ; H01L29/66
摘要：
A method of fabricating a semiconductor device. The method includes forming an isolation feature in a substrate, forming a first gate stack and a second gate stack over the substrate, forming a first recess cavity and a second recess cavity in the substrate, growing a first epitaxial (epi) material in the first recess cavity and a second epi material in the second recess cavity, and etching the first epi material and the second epi material. The first recess cavity is between the isolation feature and the first gate stack and the second recess cavity is between the first gate stack and the second gate stack. A topmost surface of the first epi material has a first crystal plane and a topmost surface of the second epi material has a second crystal plane. The topmost surface of the etched first epi material has a third crystal plane different from both the first crystal plane and the second crystal plane.
公开/授权文献
- US20160336448A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 公开/授权日：2016-11-17
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