Invention Grant
- Patent Title: Optoelectronic device including ferroelectric material
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Application No.: US14558384Application Date: 2014-12-02
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Publication No.: US09728661B2Publication Date: 2017-08-08
- Inventor: Hyeonjin Shin , Sangwoo Kim , Kyungsik Shin , Hye-Jung Park , Eunbi Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce P.L.C.
- Priority: KR10-2014-0059965 20140519
- Main IPC: H01L31/032
- IPC: H01L31/032 ; H01L31/0224 ; H01L31/04 ; H01L31/08

Abstract:
Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.
Public/Granted literature
- US20150333196A1 OPTOELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL Public/Granted day:2015-11-19
Information query
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