Invention Grant
- Patent Title: Monolithic nano-cavity light source on lattice mismatched semiconductor substrate
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Application No.: US14541986Application Date: 2014-11-14
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Publication No.: US09728671B2Publication Date: 2017-08-08
- Inventor: Effendi Leobandung , Ning Li , Tak H. Ning , Jean-Oliver Plouchart , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/06 ; H01L33/10 ; H01L33/24 ; H01L33/30 ; H01L33/40 ; H01S5/042 ; H01S5/10 ; H01S5/22 ; H01S5/343 ; H01L33/44
Abstract:
An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.
Public/Granted literature
- US20160141836A1 MONOLITHIC NANO-CAVITY LIGHT SOURCE ON LATTICE MISMATCHED SEMICONDUCTOR SUBSTRATE Public/Granted day:2016-05-19
Information query
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