The invention relates to a method for the production of a light-emitting diode, characterized in that the method comprises a step of preparing a light-emitting layer (20) on a front face of a support (10), said emitting layer comprising at least two adjacent quantum wells (21, 22, 23) emitting at different wavelengths, said quantum wells (21, 22, 23) being in contact with the front face of the support. According to the invention, the step in which the light-emitting layer is deposited comprises a sub-step consisting in locally varying the temperature of a rear face of the support opposite the front face such that the front face of the support comprises at least two zones at different temperatures.