Invention Grant
- Patent Title: Deep ultraviolet LED and method for manufacturing the same
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Application No.: US14426328Application Date: 2014-10-24
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Publication No.: US09728677B2Publication Date: 2017-08-08
- Inventor: Yukio Kashima , Eriko Matsuura , Mitsunori Kokubo , Takaharu Tashiro , Takafumi Ookawa , Hideki Hirayama , Ryuichiro Kamimura , Yamato Osada , Satoshi Shimatani
- Applicant: MARUBUN CORPORATION , TOSHIBA KIKAI KABUSHIKI KAISHA , RIKEN , ULVAC, INC. , TOKYO OHKA KOGYO CO., LTD.
- Applicant Address: JP Tokyo JP Tokyo JP Saitama JP Kanagawa JP Kanagawa
- Assignee: MARUBUN CORPORATION,TOSHIBA KIKAI KABUSHIKI KAISHA,RIKEN,ULVAC, INC.,TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: MARUBUN CORPORATION,TOSHIBA KIKAI KABUSHIKI KAISHA,RIKEN,ULVAC, INC.,TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Tokyo JP Tokyo JP Saitama JP Kanagawa JP Kanagawa
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2014-043388 20140306
- International Application: PCT/JP2014/078308 WO 20141024
- International Announcement: WO2015/133000 WO 20150911
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/00 ; H01L33/06 ; H01L33/32 ; H01L33/40
Abstract:
A deep ultraviolet LED with a design wavelength of λ is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of λ; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.
Public/Granted literature
- US09806229B2 Deep ultraviolet LED and method for manufacturing the same Public/Granted day:2017-10-31
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