- 专利标题: Thermally-assisted MRAM cells with improved reliability at writing
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申请号: US14787957申请日: 2014-04-11
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公开(公告)号: US09728711B2公开(公告)日: 2017-08-08
- 发明人: Sebastien Bandiera , Ioan Lucian Prejbeanu
- 申请人: Crocus Technology SA
- 申请人地址: FR Grenoble
- 专利权人: CROCUS TECHNOLOGY SA
- 当前专利权人: CROCUS TECHNOLOGY SA
- 当前专利权人地址: FR Grenoble
- 代理机构: Pearne & Gordon LLP
- 优先权: EP13290096 20130429
- 国际申请: PCT/EP2014/057415 WO 20140411
- 国际公布: WO2014/177368 WO 20141106
- 主分类号: H01L43/02
- IPC分类号: H01L43/02 ; G11C11/16 ; H01L43/08 ; H01L27/22 ; H01L43/10
摘要:
MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.