Invention Grant
- Patent Title: Spin transfer torque structure for MRAM devices having a spin current injection capping layer
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Application No.: US14866359Application Date: 2015-09-25
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Publication No.: US09728712B2Publication Date: 2017-08-08
- Inventor: Bartlomiej Adam Kardasz , Mustafa Michael Pinarbasi
- Applicant: SPIN TRANSFER TECHNOLOGIES, INC.
- Applicant Address: US CA Fremont
- Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer LLP
- Main IPC: H01L43/08
- IPC: H01L43/08
Abstract:
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.
Public/Granted literature
- US20160315249A1 SPIN TRANSFER TORQUE STRUCTURE FOR MRAM DEVICES HAVING A SPIN CURRENT INJECTION CAPPING LAYER Public/Granted day:2016-10-27
Information query
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