Invention Grant
- Patent Title: Magnetic tunnel junction (MTJ) device array
-
Application No.: US15389322Application Date: 2016-12-22
-
Publication No.: US09728718B2Publication Date: 2017-08-08
- Inventor: Vladimir Machkaoutsan , Matthias Georg Gottwald , Mustafa Badaroglu , Jimmy Kan , Kangho Lee , Yu Lu , Chando Park
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC.
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; H01L43/02 ; H01L43/08
Abstract:
A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.
Public/Granted literature
- US20170104153A1 MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY Public/Granted day:2017-04-13
Information query
IPC分类:
