Invention Grant
- Patent Title: Socket structure for three-dimensional memory
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Application No.: US15342819Application Date: 2016-11-03
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Publication No.: US09728722B2Publication Date: 2017-08-08
- Inventor: Jun Sumino
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L45/00 ; H01L27/24 ; H01L21/768 ; H01L23/522

Abstract:
Socket structures that are configured to use area efficiently, and methods for providing socket regions that use area efficiently, are provided. The staircase type contact area or socket region includes dielectric layers between adjacent planar electrodes that partially cover a portion of a planar electrode that does directly underlie an adjacent planar electrode. The portion of a dielectric layer between adjacent planar electrodes can be sloped, such that it extends from an edge of an overlying planar electrode to a point between the edge of an underlying planar electrode and a point corresponding to an edge of the overlying planar electrode.
Public/Granted literature
- US20170077399A1 SOCKET STRUCTURE FOR THREE-DIMENSIONAL MEMORY Public/Granted day:2017-03-16
Information query
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