In order to reduce the problems with sharp-edged control voltages of semiconductor switching elements, it is provided that the control terminal (6) of the semiconductor switching element (1) is connected to the output terminal (7) of the semiconductor switching element (1) via a ramp generation unit (5), and the ramp generation unit (5) flattens the sharply ascending and descending edges of the driver control voltage (VS) into the form of a ramp, in order to generate a transistor control voltage (VG) at the output of the ramp generation unit (5).