There is provided a logic device including memory cell units. Each of the memory cell units includes a pair of bit lines arranged corresponding to a column of memory cells, a word line, and an inverter unit connected to the pair of bit lines. The inverter unit includes a first CMOS and a second CMOS. The first CMOS is configured to receive an input signal from one of the pair of bit lines. The first CMOS includes a first MOS transistor and a second MOS transistor. The second CMOS is configured to receive an input signal from the other of the pair of bit lines. The second CMOS includes a third MOS transistor and a fourth MOS transistor. The inverter unit is configured to output a first differential signal and a second differential signal as a data signal.