Invention Grant
- Patent Title: Field programmable gate array utilizing two-terminal non-volatile memory
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Application No.: US14335507Application Date: 2014-07-18
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Publication No.: US09729155B2Publication Date: 2017-08-08
- Inventor: Hagop Nazarian , Sang Thanh Nguyen , Tanmay Kumar
- Applicant: Crossbar, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: CROSSBAR, INC.
- Current Assignee: CROSSBAR, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H03K19/00 ; H01L21/8234 ; H03K19/0944

Abstract:
A method for an FPGA includes coupling a first electrode of a first resistive element to a first input voltage, coupling a second electrode of a second resistive element to a second input voltage, applying a first programming voltage to a shared node of a second electrode of the first resistive element, a first electrode of the second resistive element, and to a gate of a transistor element, and changing a resistance state of the first resistive element to a low resistance state while maintaining a resistance state of the second resistive element, when a voltage difference between the first programming voltage at the second terminal and the first input voltage at the first terminal exceeds a programming voltage associated with the first resistive element.
Public/Granted literature
- US20140327470A1 FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE MEMORY Public/Granted day:2014-11-06
Information query
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