Invention Grant
- Patent Title: Source driving integrated circuits including an electrostatic discharge circuit and related layout method
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Application No.: US14231921Application Date: 2014-04-01
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Publication No.: US09735053B2Publication Date: 2017-08-15
- Inventor: Young-Jin Cho , Hong-Yeon Kim , Youn-Ho Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2013-0037038 20130404
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H02H9/04 ; H01L27/02

Abstract:
A source driving integrated circuit is provided. The source driving integrated circuit includes a source driver area, an electrostatic discharge (ESD) circuit area and a fan-out area. The source driver area includes a plurality of source driver units. The ESD circuit area includes a plurality of ESD units. The fan-out area includes conduction lines for electrically connecting respective ones of the source driver units of the source driver area to ones of the plurality of the ESD units of the ESD circuit area. In a horizontal structure of a semiconductor integrated circuit, the fan-out area at least partially overlaps the ESD circuit area.
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