- 专利标题: Multi-stack package-on-package structures
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申请号: US14972622申请日: 2015-12-17
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公开(公告)号: US09735131B2公开(公告)日: 2017-08-15
- 发明人: An-Jhih Su , Chen-Hua Yu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L25/065 ; H01L25/00 ; H01L21/56 ; H01L23/31
摘要:
A package includes a first device die, and a first encapsulating material encapsulating the first device die therein. A bottom surface of the first device die is coplanar with a bottom surface of the first encapsulating material. First dielectric layers are underlying the first device die. First redistribution lines are in the first dielectric layers and electrically coupling to the first device die. Second dielectric layers are overlying the first device die. Second redistribution lines are in the second dielectric layers and electrically coupling to the first redistribution lines. A second device die is overlying and electrically coupling to the second redistribution lines. No solder region connects the second device die to the second redistribution lines. A second encapsulating material encapsulates the second device die therein. A third device die is electrically coupled to the second redistribution lines. A third encapsulating material encapsulates the third device die therein.
公开/授权文献
- US20170133351A1 Multi-Stack Package-on-Package Structures 公开/授权日:2017-05-11
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