- 专利标题: Substrate treatment method, computer readable storage medium and substrate treatment system
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申请号: US15129000申请日: 2015-04-16
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公开(公告)号: US09741583B2公开(公告)日: 2017-08-22
- 发明人: Makoto Muramatsu , Takahiro Kitano , Tadatoshi Tomita , Gen You , Takanori Nishi
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Posz Law Group, PLC
- 优先权: JP2014-091741 20140425
- 国际申请: PCT/JP2015/061674 WO 20150416
- 国际公布: WO2015/163225 WO 20151029
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; H01L21/308 ; H01L21/306 ; H01L21/027 ; G03F7/09 ; G03F7/16 ; G03F7/20 ; G03F7/38 ; G03F7/30 ; G03F7/40 ; B82Y40/00 ; B82Y10/00
摘要:
A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.
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